WP3 deals with the use of the STT-MTJ for analog applications. We will evaluate the use of magnetic devices as current sensors, for RF functions and for other analog functions
- To leverage the availability of MTJ in a CMOS process in proposing a set of analogue and RF IPs for IoT systems
Task 3.1 Sensors (LIRMM, CEA, Tower)
The linear and reversible dependence of the resistance of MTJs with properly oriented magnetic fields will be exploited to design, fabricate and characterize MTJ based sensors. Several architectures are useful to monitor most of IoT embedded systems applications.
Task 3.2 Analogue RF receivers based on MTJs (TUD, CEA, Tower)
The main task is to realize the integration of MSS MTJs on top of CMOS PLLs and to demonstrate phase noise reduction of the fully integrated PLL as compared to the standalone MSS. Another application will be frequency detection using the MSS stack. Several detection schemes will be tested off chip and their performances evaluated with respect to sensitivity (output to input power), frequency resolution, signal stability and signal to noise ratio.
Task 3.3 MSS-controlled digital tuning circuits (LIRMM, Tower)
Bistability and non-volatility of MSS will be exploited to develop a family of tunable functions. This task will explore compensation and tuning architectures in the form of digital potentiometers or digitally-programmable current sources, controlled by MSS-based registers, to obtain an electrical non-volatile tuning that could be modified in-field to take into account ageing of the circuit. After feasibility evaluation, a set of demonstrators will be fabricated and characterized.