Intel Says FinFET-Based Embedded MRAM is Production-Ready

Intel gave further details on its technique for embedding spin-transfer torque (STT)-MRAM into devices using its 22-nm FinFET process, pronouncing the technology ready for high-volume manufacturing.

Embedded MRAM is considered a promising technology for applications such as internet of things (IoT) devices. MRAM — which is a non-volatile memory technology — is considered a promising long-term candidate to replace memory chip stalwarts DRAM and NAND flash, which face major scaling challenges as the industry moves to smaller nodes. But MRAM is also appealing as an embedded technology replacement for flash and embedded SRAM because of its fast read/write times, high endurance, and strong retention.

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