Imec has released the first demonstration of SOT-MRAM technology integration on 300mm Si wafer

  • Technological survey

MRAM wafer

At 2018 Symposia on VLSI Technology and Circuits, imec, the world-leading research and innovation hub in nanoelectronics and digital technology, demonstrates for the first time the possibility to fabricate state-of-the-art spin-orbit torque MRAM (SOT-MRAM) devices on 300mm wafers using CMOS compatible processes. With an unlimited endurance (>5x1010), fast switching speed (210ps), and power consumption as low as 300pJ, the SOT-MRAM devices manufactured in a 300mm line achieve the same or better performance as lab devices. This next-generation MRAM technology targets replacement of L1/L2 SRAM cache memories in high-performance computing applications.

 

More information here.