Grenoble-Minatec, France, 3-5 July 2017
Organized by Spintec laboratory, this introductory course aims at helping students, researchers and engineers having little or no background in magnetism to better understand the physics and working principles of this new class of magnetic memories called MRAM (Magnetic Random Access Memory) based on magnetic tunnel junctions.
These MRAM and particularly the STT-MRAM (Spin-Transfer-Torque RAM) are attracting an increasing interest in microelectronics industry. In 2016, numerous announcements from major microelectronics companies have been published about the forthcoming volume production of MRAM based products.
The course will cover various aspects of MRAM technology: the basic spintronics phenomena involved in MRAM, the materials constituting the magnetic tunnel junctions, the various categories of MRAM (pros/cons, performances, degree of maturity), a comparison with other technologies of non-volatile memories in terms of working principle, performances, foreseen applications (Phase Change RAM and Resistive RAM), their fabrication process, and the perspectives of low-power electronic circuits based on this hybrid CMOS/magnetic technology. The course lasts 2 and a half day plus an optional half day. The language will be English.
This will be the fourth edition of InMRAM. The three first editions were quite successful with an average of 80 attendees from all over the world and coming from both academic laboratories and companies. At the beginning of the course, each attendee will have the choice between two introductory tutorials (3rd July morning): one on magnetism (for attendees having no or little background in magnetism) and one on microelectronics (for those having no or little background in microelectronics). A tutorial on 3 terminal Spin-orbit-torque MRAM will be added to the program. On the afternoon of the 3rd day (optional, July 5th), each attendee will have the opportunity to either visit SPINTEC or attend a training on tools for the design of hybrid CMOS/magnetic circuits.
More details can be found on the InMRAM website.
Registration will be opened between 3rd April 2017 and 3rd June 2017.