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  • Technological survey

Sub-10nm thermally stable Perpendicular Shape Anisotropy magnetic memory

SPINTEC in Grenoble has proposed and demonstrated a new concept of magnetic memory thermally stable and electrically switchable at diameters down to 4nm.

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Arm logo 2

  • Technological survey

Arm will launch an eMRAM compiler for Samsung's 28nm FDSOI process by the end of 2018

Arm announced that it is developing a compiler for embedded MRAM (eMRAM) for use with Samsung Foundry's 28nm fully-depleted silicon-on-insulator (FDSOI) integrated circuit manufacturing process. Arm completed its first eMARM IP test chip tape out, and the compiler will be available for use by lead partners in 4Q18.

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MRAM wafer

  • Technological survey

Imec has released the first demonstration of SOT-MRAM technology integration on 300mm Si wafer

Imec has demonstrated manufacturability of state-of-the-art spin-orbit torque MRAM devices on 300mm Si wafers This work has been presented at VLSI conference last June 20th 2018.

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GREAT - GDR SoC² 180614

  • GREAT Events & Results

"GREAT: feedback on a success story" @ GDR SOC² (Paris June 14th 2018)

Guillaume Prenat (CEA Spintec), our coordinator, has been invited last June 14th 2018 to share his experience about GREAT since the project set up phase untill now.

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GREAT T.O. 2

  • GREAT Events & Results

The EU GREAT Project delivered its 2nd tape-out demonstrator

After the delivery of a first demonstrator in 2017, the project partners now announced the second hybrid CMOS/MSS-MRAM 180nm Tape Out at Israel-based Tower Jazz.

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