Hprobe, a spin-off company from Spintec, joins with Imec to develop advanced magnetic tester equipment for the next generation of MRAM devices based on the Spin Orbit Torque (SOT) effect.
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Bernard DIENY has received the 2018 IEEE Carrier Achievement Award for contributions to spintronics applications including spin-valves and MRAMs and for strengthening the relationship between magnetics and microelectronics communities.
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Samsung announced that it has started to mass produce its first embedded MRAM, made using the company's 28nm FD-SOI process. Samsung says that its eMRAM memory module offers higher performance and endurance when compared to eFlash, and can be integrated into existing chips.
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SAN FRANCISCO — Intel gave further details on its technique for embedding spin-transfer torque (STT)-MRAM into devices using its 22-nm FinFET process, pronouncing the technology ready for high-volume manufacturing. Embedded MRAM is considered a promising technology for applications such as internet of things (IoT) devices.
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Market analyst firm Yole Developpement presents its latest next-generation memory forecasts in an interesting new article. The company says that following more than 15 years of development, PCM is finally taking off in stand-alone applications due to strong support from Intel and Micron.
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